IndiumV3, Main, Repository, bibRecord, 002674

Pulsed electrodeposition of p-type CuInSe2 thin films

Identifieur interne : 002674 ( Main/Repository ); précédent : 002673; suivant : 002675

Pulsed electrodeposition of p-type CuInSe2 thin films

Auteurs : RBID : Pascal:12-0084903

Descripteurs français

Pascal (Inist)
- Courant pulsé, Dépôt électrolytique, Couche mince, Recuit, Traitement surface, Semiconducteur type p, Microscopie électronique balayage, Diffraction RX, Spectrométrie RX dispersion énergie, Spectrométrie Raman, Courant photoélectrique, Réaction électrochimique, Indium Séléniure, Cuivre Séléniure, Traitement thermique, Structure surface, Morphologie, CuInSe2, Electrode FTO.

English descriptors

KwdEn :
- Annealing, Copper Selenides, Electrochemical reaction, Electrodeposition, Energy-dispersive X-ray spectrometry, Heat treatment, Indium Selenides, Morphology, Photoelectric current, Pulsed current, Raman spectrometry, Scanning electron microscopy, Surface structure, Surface treatment, Thin film, X ray diffraction, p type semiconductor.

Abstract

CuInSe₂ thin films have been electrodeposited on conductive glass using cyclic pulse electrodeposition. One cycle consists of consequtively applying potentials E₁ and E₂, each during 10s and a total of 90 cycles are applied. E₁ is chosen between -0.7 and -0.9 V_SCE while E₂ is fixed at -0.1 V_SCE. The films are annealed in argon and then etched in KCN solution to eliminate remnant secondary phases. The material is characterized employing grazing incident X-rays diffraction, Raman spectroscopy, scanning electron microscopy and energy dispersive scanning spectroscopy. The presence of secondary phases seems to be reduced when compared to films prepared at fixed potentials. The films are crystalline and the overall quality improves by annealing in Ar. Photoelectrochemical tests, Mott-Schottky plots and I-V curves confirm p-type conduction. The diffusion regime imposed by the potential pulses could be responsible for the different morphology and composition of samples prepared with pulsed and potentiostatic electrodeposition.

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Pascal:12-0084903

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Pulsed electrodeposition of p-type CuInSe<sub>2</sub>
 thin films</title>
<author><name sortKey="Valdes, M H" uniqKey="Valdes M">M. H. Valdes</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>División Corrosión, INTEMA, Facultad de Ingeniería, CONICET-Universidad Nacional de Mar del Plata -Juan B. Justo 4302</s1>
<s2>B7608FDQ Mar del Plata</s2>
<s3>ARG</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Argentine</country>
<wicri:noRegion>B7608FDQ Mar del Plata</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Vazquez, M" uniqKey="Vazquez M">M. Vazquez</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>División Corrosión, INTEMA, Facultad de Ingeniería, CONICET-Universidad Nacional de Mar del Plata -Juan B. Justo 4302</s1>
<s2>B7608FDQ Mar del Plata</s2>
<s3>ARG</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Argentine</country>
<wicri:noRegion>B7608FDQ Mar del Plata</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0084903</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 12-0084903 INIST</idno>
<idno type="RBID">Pascal:12-0084903</idno>
<idno type="wicri:Area/Main/Corpus">002223</idno>
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<seriesStmt><idno type="ISSN">0013-4686</idno>
<title level="j" type="abbreviated">Electrochim. acta</title>
<title level="j" type="main">Electrochimica acta</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term>
<term>Copper Selenides</term>
<term>Electrochemical reaction</term>
<term>Electrodeposition</term>
<term>Energy-dispersive X-ray spectrometry</term>
<term>Heat treatment</term>
<term>Indium Selenides</term>
<term>Morphology</term>
<term>Photoelectric current</term>
<term>Pulsed current</term>
<term>Raman spectrometry</term>
<term>Scanning electron microscopy</term>
<term>Surface structure</term>
<term>Surface treatment</term>
<term>Thin film</term>
<term>X ray diffraction</term>
<term>p type semiconductor</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Courant pulsé</term>
<term>Dépôt électrolytique</term>
<term>Couche mince</term>
<term>Recuit</term>
<term>Traitement surface</term>
<term>Semiconducteur type p</term>
<term>Microscopie électronique balayage</term>
<term>Diffraction RX</term>
<term>Spectrométrie RX dispersion énergie</term>
<term>Spectrométrie Raman</term>
<term>Courant photoélectrique</term>
<term>Réaction électrochimique</term>
<term>Indium Séléniure</term>
<term>Cuivre Séléniure</term>
<term>Traitement thermique</term>
<term>Structure surface</term>
<term>Morphologie</term>
<term>CuInSe2</term>
<term>Electrode FTO</term>
</keywords>
</textClass>
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<front><div type="abstract" xml:lang="en">CuInSe<sub>2</sub>
 thin films have been electrodeposited on conductive glass using cyclic pulse electrodeposition. One cycle consists of consequtively applying potentials E<sub>1</sub>
 and E<sub>2</sub>
, each during 10s and a total of 90 cycles are applied. E<sub>1</sub>
 is chosen between -0.7 and -0.9 V<sub>SCE</sub>
 while E<sub>2</sub>
 is fixed at -0.1 V<sub>SCE</sub>
. The films are annealed in argon and then etched in KCN solution to eliminate remnant secondary phases. The material is characterized employing grazing incident X-rays diffraction, Raman spectroscopy, scanning electron microscopy and energy dispersive scanning spectroscopy. The presence of secondary phases seems to be reduced when compared to films prepared at fixed potentials. The films are crystalline and the overall quality improves by annealing in Ar. Photoelectrochemical tests, Mott-Schottky plots and I-V curves confirm p-type conduction. The diffusion regime imposed by the potential pulses could be responsible for the different morphology and composition of samples prepared with pulsed and potentiostatic electrodeposition.</div>
</front>
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 thin films</s1>
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<fA11 i1="01" i2="1"><s1>VALDES (M. H.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>VAZQUEZ (M.)</s1>
</fA11>
<fA14 i1="01"><s1>División Corrosión, INTEMA, Facultad de Ingeniería, CONICET-Universidad Nacional de Mar del Plata -Juan B. Justo 4302</s1>
<s2>B7608FDQ Mar del Plata</s2>
<s3>ARG</s3>
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<sZ>2 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>CuInSe<sub>2</sub>
 thin films have been electrodeposited on conductive glass using cyclic pulse electrodeposition. One cycle consists of consequtively applying potentials E<sub>1</sub>
 and E<sub>2</sub>
, each during 10s and a total of 90 cycles are applied. E<sub>1</sub>
 is chosen between -0.7 and -0.9 V<sub>SCE</sub>
 while E<sub>2</sub>
 is fixed at -0.1 V<sub>SCE</sub>
. The films are annealed in argon and then etched in KCN solution to eliminate remnant secondary phases. The material is characterized employing grazing incident X-rays diffraction, Raman spectroscopy, scanning electron microscopy and energy dispersive scanning spectroscopy. The presence of secondary phases seems to be reduced when compared to films prepared at fixed potentials. The films are crystalline and the overall quality improves by annealing in Ar. Photoelectrochemical tests, Mott-Schottky plots and I-V curves confirm p-type conduction. The diffusion regime imposed by the potential pulses could be responsible for the different morphology and composition of samples prepared with pulsed and potentiostatic electrodeposition.</s0>
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<fC02 i1="01" i2="X"><s0>001C01H04A</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001C01H07</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Courant pulsé</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Pulsed current</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Corriente pulsatoria</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Dépôt électrolytique</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Electrodeposition</s0>
<s5>02</s5>
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<fC03 i1="02" i2="X" l="SPA"><s0>Depósito electrolítico</s0>
<s5>02</s5>
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<fC03 i1="03" i2="X" l="FRE"><s0>Couche mince</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Thin film</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Capa fina</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Recuit</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Annealing</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Recocido</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Traitement surface</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Surface treatment</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Tratamiento superficie</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Semiconducteur type p</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>p type semiconductor</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Semiconductor tipo p</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Microscopía electrónica barrido</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Diffraction RX</s0>
<s5>08</s5>
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<fC03 i1="08" i2="X" l="ENG"><s0>X ray diffraction</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Difracción RX</s0>
<s5>08</s5>
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<fC03 i1="09" i2="X" l="FRE"><s0>Spectrométrie RX dispersion énergie</s0>
<s5>09</s5>
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<fC03 i1="09" i2="X" l="ENG"><s0>Energy-dispersive X-ray spectrometry</s0>
<s5>09</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Raman spectrometry</s0>
<s5>10</s5>
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<fC03 i1="10" i2="X" l="SPA"><s0>Espectrometría Raman</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Courant photoélectrique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Photoelectric current</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Corriente fotoeléctrica</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Réaction électrochimique</s0>
<s5>32</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Electrochemical reaction</s0>
<s5>32</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Reacción electroquímica</s0>
<s5>32</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Indium Séléniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>33</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Indium Selenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>33</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Indio Seleniuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>33</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Cuivre Séléniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>34</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Copper Selenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>34</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Cobre Seleniuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>34</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Traitement thermique</s0>
<s5>35</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Heat treatment</s0>
<s5>35</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Tratamiento térmico</s0>
<s5>35</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Structure surface</s0>
<s5>36</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Surface structure</s0>
<s5>36</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Estructura superficie</s0>
<s5>36</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Morphologie</s0>
<s5>37</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Morphology</s0>
<s5>37</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Morfología</s0>
<s5>37</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>CuInSe2</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Electrode FTO</s0>
<s4>INC</s4>
<s5>77</s5>
</fC03>
<fN21><s1>065</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Pulsed electrodeposition of p-type CuInSe2 thin films

Pulsed electrodeposition of p-type CuInSe2 thin films

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri